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NTD65N03RT4

ON Semiconductor
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 9.5A DPAK
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Technical Details

Technical

Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0146Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 130A
Avalanche Energy Rating (Eas) 71.7 mJ
Turn-Off Delay Time 20.3 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 5V
Current - Continuous Drain (Id) @ 25°C 9.5A Ta 32A Tc
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 20V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 8.4m Ω @ 30A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 50W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.3W Ta 50W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 65A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 235
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 25V
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2006
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Physical

Transistor Element Material SILICON
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount

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