Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0146Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 130A
Avalanche Energy Rating (Eas) 71.7 mJ
Turn-Off Delay Time 20.3 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 5V
Current - Continuous Drain (Id) @ 25°C 9.5A Ta 32A Tc
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 20V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 8.4m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.3W Ta 50W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 235
Technology MOSFET (Metal Oxide)
Terminal Finish Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ