FET Technology METAL-OXIDE SEMICONDUCTOR
Drain Current-Max (Abs) (ID) 2A
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 2A
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 25V
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Subcategory FET General Purpose Power
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 3 (168 Hours)