Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 22.6 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 430m Ω @ 4.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 100V
Current - Continuous Drain (Id) @ 25°C 8.5A Tc
Operating Temperature 150°C TJ
Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 8.5A
Turn-Off Delay Time 15.6 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V