PD57060-E
RoHS 
RoHS compliant
RoHS compliantPackage PowerSO-10 Exposed Bottom Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
FET RF 65V 945MHZ PWRSO10
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Min Breakdown Voltage 65V
Voltage - Test 28V
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 65V
Drain Current-Max (Abs) (ID) 7A
Max Output Power 60W
Gain 14.3dB
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 7A
Transistor Type LDMOS
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 65V
Transistor Application AMPLIFIER
Current - Test 100mA
Case Connection SOURCE
Power Dissipation 79W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G2
Pin Count 10
Base Part Number PD57060
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Frequency 945MHz
Current Rating 7A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 250
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 79W
Voltage - Rated DC 65V
Subcategory FET General Purpose Power
Additional Feature HIGH RELIABILITY
Min Operating Temperature -65°C
Max Operating Temperature 165°C
Terminal Finish Matte Tin (Sn) - annealed
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Active
JESD-609 Code e3
Packaging Tube
Physical
Number of Pins 3
Package / Case PowerSO-10 Exposed Bottom Pad
Mount Surface Mount
Supply Chain
Factory Lead Time 25 Weeks
Alternative Model
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