PD20010S-E
RoHS 
RoHS compliant
RoHS compliantPackage PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
TRANS RF N-CH FET POWERSO-10RF
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Technical Details
Physical
Mount Surface Mount
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Number of Pins 3
Technical
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 165°C
Min Operating Temperature -65°C
Additional Feature ESD PROTECTION, HIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation 59W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 5A
Frequency 2GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number PD20010
Pin Count 10
JESD-30 Code R-PDFP-F2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 59W
Case Connection SOURCE
Current - Test 150mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 15V
Gain 11dB
Max Output Power 15W
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 40V
Power - Output 10W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 13.6V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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