Avalanche Energy Rating (Eas) 144.5 mJ
DS Breakdown Voltage-Min 25V
Pulsed Drain Current-Max (IDM) 156A
Drain-source On Resistance-Max 0.008Ohm
Drain Current-Max (Abs) (ID) 12A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 25V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 12A Ta 78A Tc
Input Capacitance (Ciss) (Max) @ Vds 1.96pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 5.7m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.31W Ta 56.6W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status COMMERCIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ