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Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
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Buying Options
Total Price: USD $0.2
Unit Price: USD $0.200205
≥1 USD $0.200205
≥10 USD $0.188865
≥100 USD $0.178178
≥500 USD $0.168092
≥1000 USD $0.158582
Inventory: 1121
Minimum: 1
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Power Gain-Min (Gp) 20dB
Highest Frequency Band ULTRA HIGH FREQUENCY B
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 10V
Drain Current-Max (Abs) (ID) 0.04A
Polarity/Channel Type N-CHANNEL
Transistor Application AMPLIFIER
Case Connection SOURCE
Operating Mode DUAL GATE, DEPLETION MODE
Configuration SINGLE
Number of Elements 1
JESD-30 Code R-PDSO-G4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Additional Feature LOW NOISE
Terminal Finish Tin (Sn)
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1
JESD-609 Code e3

Physical

Transistor Element Material SILICON
Number of Terminals 4
Surface Mount YES

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