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STB12NM50T4

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 550V 12A D2PAK
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Buying Options
Total Price: USD $10.74
Unit Price: USD $10.73975
≥1 USD $10.73975
≥10 USD $8.8122
≥100 USD $8.5367
≥500 USD $8.2612
≥1000 USD $7.9857
Inventory: 1187
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Technical

Nominal Vgs 4 V
Avalanche Energy Rating (Eas) 400 mJ
Pulsed Drain Current-Max (IDM) 48A
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 30V
Threshold Voltage 4V
Continuous Drain Current (ID) 12A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 10 ns
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
Vgs(th) (Max) @ Id 5V @ 50μA
Rds On (Max) @ Id, Vgs 350m Ω @ 6A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 20 ns
Power Dissipation 160W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 160W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 3
Base Part Number STB12N
Current Rating 12A
Peak Reflow Temperature (Cel) 245
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 550V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Resistance 350mOhm
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series MDmesh?
Packaging Tape & Reel (TR)
Operating Temperature -65°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 26 Weeks

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