NE25139-T1
RoHS
/
Package TO-253-4, TO-253AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
FET RF 13V 900MHZ SOT-143
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Technical Details
Physical
Mount Surface Mount
Package / Case TO-253-4, TO-253AA
Number of Pins 4
Transistor Element Material GALLIUM ARSENIDE
Technical
Packaging Cut Tape (CT)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Voltage - Rated 13V
Additional Feature LOW NOISE
Terminal Form GULL WING
Current Rating 40mA
Frequency 900MHz
Base Part Number NE251
Qualification Status Not Qualified
Operating Temperature (Max) 125°C
Number of Elements 1
Configuration SINGLE
Operating Mode DUAL GATE, DEPLETION MODE
Case Connection SOURCE
Current - Test 10mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type MESFET Dual Gate
Continuous Drain Current (ID) 40A
Gain 20dB
DS Breakdown Voltage-Min 13V
FET Technology METAL SEMICONDUCTOR
Noise Figure 1.1dB
Voltage - Test 5V
Feedback Cap-Max (Crss) 0.03 pF
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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