FET Technology HIGH ELECTRON MOBILITY
DS Breakdown Voltage-Min 5V
Drain Current-Max (Abs) (ID) 0.12A
Gate to Source Voltage (Vgs) 1V
Continuous Drain Current (ID) 120mA
Transistor Type pHEMT FET
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 3V
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Qualification Status Not Qualified
Base Part Number ATF-541M4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 360mW
Subcategory FET RF Small Signal
Additional Feature LOW NOISE
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)