Resistor - Emitter Base (R2) 100 k Ω
Continuous Collector Current 100mA
Resistor - Base (R1) 100 k Ω
Frequency - Transition 250MHz
Max Breakdown Voltage 50V
Transition Frequency 250MHz
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 100mV @ 500μA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Max Collector Current 20mA
Collector Emitter Voltage (VCEO) 100mV
Transistor Type NPN - Pre-Biased
Transistor Application SWITCHING
Element Configuration Single
Max Power Dissipation 150mW
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)