Feedback Cap-Max (Crss) 16 pF
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) 45A
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 27A
Turn-Off Delay Time 17 ns
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 15V
Vgs(th) (Max) @ Id 1.3V @ 250μA
Rds On (Max) @ Id, Vgs 33m Ω @ 7A , 8V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual) Common Source
Turn On Delay Time 7.8 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Base Part Number CSD87312
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 2.5W
Subcategory FET General Purpose Powers
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ