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CSD87312Q3E

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 27A 8VSON
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Buying Options
Total Price: USD $1.26
Unit Price: USD $1.2584
≥1 USD $1.2584
≥10 USD $1.03224
≥100 USD $0.80256
≥500 USD $0.680293
≥1000 USD $0.554171
Inventory: 1110
Minimum: 1
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status ROHS3 Compliant

Dimensions

Thickness 900μm
Width 3.3mm
Length 3.3mm

Technical

Feedback Cap-Max (Crss) 16 pF
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) 45A
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 27A
Turn-Off Delay Time 17 ns
Fall Time (Typ) 2.8 ns
Drain to Source Voltage (Vdss) 30V
Rise Time 16 ns
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 15V
Vgs(th) (Max) @ Id 1.3V @ 250μA
Rds On (Max) @ Id, Vgs 33m Ω @ 7A , 8V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual) Common Source
Turn On Delay Time 7.8 ns
Power Dissipation 2.5W
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Number of Elements 2
Base Part Number CSD87312
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Terminal Form NO LEAD
Max Power Dissipation 2.5W
Subcategory FET General Purpose Powers
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
ECCN Code EAR99
Number of Terminations 7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e4
Series NexFET?
Packaging Cut Tape (CT)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Gold

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 6 Weeks

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