NTDV18N06LT4G
RoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 18A DPAK
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 72 mJ
DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 54A
Drain-source On Resistance-Max 0.065Ohm
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 18A
Turn-Off Delay Time 19 ns
Fall Time (Typ) 38 ns
Vgs (Max) ±15V
Drive Voltage (Max Rds On,Min Rds On) 5V
Drain to Source Voltage (Vdss) 60V
Rise Time 79ns
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 65m Ω @ 9A, 5V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 9.9 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.1W Ta 55W Tj
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 3
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
HTS Code 8541.29.00.95
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2005
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Surface Mount YES
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Alternative Model
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