FET Technology METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) 2A
Drain to Source Breakdown Voltage 450V
Drain Current-Max (Abs) (ID) 0.5A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 500mA
Drain to Source Voltage (Vdss) 450V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 3.8 Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 1.3W
Subcategory FET General Purpose Power
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ