IXTH90P10P
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Single P-Channel 100 V 25 mOhm 180 W Power Mosfet - TO-247 AD
PDF
/
Buying Options
Total Price: USD $3.32
Unit Price: USD $3.31835
≥1 USD $3.31835
≥10 USD $2.7227
≥100 USD $2.63815
≥500 USD $2.55265
≥1000 USD $2.46715
≥3000 USD $2.21255
Inventory: 32504
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 28 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series PolarP?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 25MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 462W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 462W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 90A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 225A
Avalanche Energy Rating (Eas) 2500 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
IXTH90P10P+price,IXTH90P10P+datasheet,IXTH90P10P+in stock,buy+IXTH90P10P,finder+IXTH90P10P,IXTH90P10P+tutorials,IXTH90P10P+download