FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) 22V
Continuous Drain Current (ID) 78.5A
Turn-Off Delay Time 26 ns
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 6.5m Ω @ 10A, 10V
FET Type 2 N-Channel (Dual)
Turn On Delay Time 8.8 ns
Max Power Dissipation 72W
Subcategory FET General Purpose Powers
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Automotive, AEC-Q101, STripFET? V
Operating Temperature -55°C~175°C TJ