Avalanche Energy Rating (Eas) 250 mJ
Pulsed Drain Current-Max (IDM) 64A
Drain to Source Breakdown Voltage -60V
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 16A
Turn-Off Delay Time 25.5 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 25V
Vgs(th) (Max) @ Id 1.5V @ 100μA
Rds On (Max) @ Id, Vgs 125m Ω @ 8A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 70W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 245
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ