FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 10A
Drain-source On Resistance-Max 0.22Ohm
Drain Current-Max (Abs) (ID) 5A
Continuous Drain Current (ID) 5A
Drain to Source Voltage (Vdss) 60V
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 220m Ω @ 3A, 10V
FET Type 5 P-Channel, Common Source
Operating Mode ENHANCEMENT MODE
Configuration COMMON SOURCE, 5 ELEMENTS WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Operating Temperature 150°C TJ