IRL3202STRR
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 48A D2PAK
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 270 mJ
DS Breakdown Voltage-Min 20V
Pulsed Drain Current-Max (IDM) 190A
Drain-source On Resistance-Max 0.019Ohm
Drain Current-Max (Abs) (ID) 48A
Vgs (Max) ±10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 7V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 43nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 48A Tc
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 15V
Vgs(th) (Max) @ Id 700mV @ 250μA
Rds On (Max) @ Id, Vgs 16m Ω @ 29A, 7V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 69W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish MATTE TIN OVER NICKEL
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series HEXFET?
Published 1998
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Alternative Model
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