FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 45 mJ
DS Breakdown Voltage-Min 500V
Pulsed Drain Current-Max (IDM) 10A
Drain Current-Max (Abs) (ID) 5A
Continuous Drain Current (ID) 5A
Drain to Source Voltage (Vdss) 500V
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 1.4 Ω @ 2.5A, 10V
Transistor Application SWITCHING
FET Type 6 N-Channel (3-Phase Bridge)
Operating Mode ENHANCEMENT MODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Terminations 15
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ