Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0108Ohm
Drain Current-Max (Abs) (ID) 100A
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 58.5A
Turn-Off Delay Time 16.6 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 8.8A Ta 58.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 6.95m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 870mW Ta 38.5W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ