FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 15A
Drain-source On Resistance-Max 0.14Ohm
Drain Current-Max (Abs) (ID) 10A
Continuous Drain Current (ID) 6A
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 10A 6A
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 10V
Rds On (Max) @ Id, Vgs 140m Ω @ 5A, 4V
Transistor Application SWITCHING
FET Type 3 N and 3 P-Channel (3-Phase Bridge)
Operating Mode ENHANCEMENT MODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ