VT6M1T2CR
RoHS 
RoHS compliant
RoHS compliantPackage 6-SMD, Flat Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 20V 0.1A VMT6
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Buying Options
Total Price: USD $0.08
Unit Price: USD $0.084641
≥1 USD $0.084641
≥10 USD $0.069294
≥100 USD $0.06162
≥500 USD $0.055865
≥1000 USD $0.051261
Inventory: 1124
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 1997
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Power Dissipation 120mW
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 6
JESD-30 Code R-PDSO-F6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Operating Mode ENHANCEMENT MODE
Power - Max 120mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 7.1pF @ 10V
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 100mA
Drain Current-Max (Abs) (ID) 0.1A
Drain-source On Resistance-Max 4.2Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 1.2V Drive
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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