NTMFS4922NET1G
RoHS
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Package 8-PowerTDFN, 5 Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET NFET S08FL 30V 147A 2MOH
PDF
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Buying Options
Total Price: USD $2.13
Unit Price: USD $2.133463
≥1 USD $2.133463
≥200 USD $0.852072
≥500 USD $0.823188
≥1500 USD $0.808746
Inventory: 1070
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Physical
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 5
Number of Elements 1
Power Dissipation-Max 930mW Ta 69.44W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.72W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5505pF @ 15V
Current - Continuous Drain (Id) @ 25°C 17.1A Ta 147A Tc
Gate Charge (Qg) (Max) @ Vgs 76.5nC @ 10V
Rise Time 36.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.4 ns
Turn-Off Delay Time 39.3 ns
Continuous Drain Current (ID) 29.1A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.003Ohm
Drain to Source Breakdown Voltage 30V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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