US6J11TR
RoHS 
RoHS compliant
RoHS compliantPackage 6-SMD, Flat Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 12V 1.3A TUMT6
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Buying Options
Total Price: USD $0.4
Unit Price: USD $0.396
≥1 USD $0.396
≥10 USD $0.3388
≥100 USD $0.235576
≥500 USD $0.183902
≥1000 USD $0.1595
Inventory: 1092
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory Other Transistors
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *J11
Pin Count 6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8 ns
Power - Max 320mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 260m Ω @ 1.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 4.5V
Rise Time 10ns
Drain to Source Voltage (Vdss) 12V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 1.3A
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 0.0013A
DS Breakdown Voltage-Min 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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