Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Powers
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 38W
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Continuous Drain Current (ID) 11A
Drain-source On Resistance-Max 0.399Ohm
Pulsed Drain Current-Max (IDM) 45A
Avalanche Energy Rating (Eas) 120 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Capacitance - Input 545pF