FET Feature Logic Level Gate, 1.5V Drive
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 20V
Drain-source On Resistance-Max 0.09Ohm
Drain Current-Max (Abs) (ID) 2.5A
Continuous Drain Current (ID) 2.4A
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.5A 2.4A
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 10V
Vgs(th) (Max) @ Id 1V @ 1mA
Rds On (Max) @ Id, Vgs 72m Ω @ 2.5A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Subcategory Other Transistors
Terminal Finish TIN COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Operating Temperature 150°C TJ