IPP052NE7N3GHKSA1
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 75V 80A TO220-3
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Width 4.57mm
Length 10.36mm
Height 15.95mm
Technical
Rds On Max 5.2 mΩ
Drain to Source Resistance 5.2mOhm
Input Capacitance 4.75nF
Drain to Source Breakdown Voltage 75V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Turn-Off Delay Time 30 ns
Fall Time (Typ) 8 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 75V
Rise Time 11ns
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 4750pF @ 37.5V
Vgs(th) (Max) @ Id 3.8V @ 91μA
Rds On (Max) @ Id, Vgs 5.2mOhm @ 80A, 10V
FET Type N-Channel
Turn On Delay Time 14 ns
Element Configuration Single
Power Dissipation-Max 150W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series OptiMOS?
Published 2011
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Supplier Device Package PG-TO220-3
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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