SH8MA3TB1
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
SH8MA3TB1 IS LOW ON-RESISTANCE A
PDF
/
Buying Options
Total Price: USD $0.85
Unit Price: USD $0.8536
≥1 USD $0.8536
≥10 USD $0.69872
≥100 USD $0.543136
≥500 USD $0.460381
≥1000 USD $0.37503
Inventory: 1455
Minimum: 1
-
+
Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
FET Feature Standard
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 1.7 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 18A
Drain-source On Resistance-Max 0.057Ohm
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 7.2nC, 10nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7A Ta 6A Ta
Input Capacitance (Ciss) (Max) @ Vds 300pF 480pF @ 15V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 28m Ω @ 7A, 10V, 50m Ω @ 6A, 10V
Transistor Application SWITCHING
FET Type N and P-Channel
Power - Max 2W Ta
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of Elements 2
JESD-30 Code R-PDSO-G8
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Packaging Cut Tape (CT)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
Recommended For You
SH8MA3TB1+price,SH8MA3TB1+datasheet,SH8MA3TB1+in stock,buy+SH8MA3TB1,finder+SH8MA3TB1,SH8MA3TB1+tutorials,SH8MA3TB1+download