NTJD4401NT4G
RoHS
/
Package 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 20V 0.63A SOT363
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Max Power Dissipation 270mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 775mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTJD4401N
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 270mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 375m Ω @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Rise Time 227ns
Fall Time (Typ) 227 ns
Turn-Off Delay Time 786 ns
Continuous Drain Current (ID) 630mA
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.375Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 5 pF
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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