Min Breakdown Voltage 60V
FET Feature Logic Level Gate
Max Junction Temperature (Tj) 150°C
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage -60V
Drain Current-Max (Abs) (ID) 0.34A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -340mA
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 10V
Current - Continuous Drain (Id) @ 25°C 340mA
Input Capacitance (Ciss) (Max) @ Vds 66pF @ 25V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Rds On (Max) @ Id, Vgs 5 Ω @ 340mA, 10V
Transistor Application SWITCHING
FET Type 2 P-Channel (Dual)
Turn On Delay Time 3.2 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Max Power Dissipation 960mW
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ