R6006ANDTL
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 6A CPT
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Buying Options
Total Price: USD $1.5
Unit Price: USD $1.50195
≥1 USD $1.50195
≥10 USD $1.2331
≥100 USD $1.19415
≥500 USD $1.15615
≥1000 USD $1.1172
Inventory: 1464
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Rds On Max 1.2 Ω
Drain to Source Resistance 900mOhm
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 2.4 mJ
Input Capacitance 460pF
Pulsed Drain Current-Max (IDM) 24A
Drain to Source Breakdown Voltage 600V
Drain Current-Max (Abs) (ID) 6A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 6A
Turn-Off Delay Time 50 ns
Fall Time (Typ) 35 ns
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 600V
Rise Time 36ns
Transistor Application SWITCHING
Turn On Delay Time 22 ns
Operating Mode ENHANCEMENT MODE
Number of Channels 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Terminal Form GULL WING
Terminal Position SINGLE
Max Power Dissipation 40W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Published 2013
Packaging Tape & Reel (TR)
Physical
Number of Pins 3
Package / Case TO-252-3
Mount Surface Mount
Supply Chain
Factory Lead Time 17 Weeks
Alternative Model
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