MMDF2N02ER2
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 25V 3.6A 8-SOIC
PDF
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Buying Options
Total Price: USD $14.12
Unit Price: USD $14.11985
≥1 USD $14.11985
≥10 USD $11.58525
≥100 USD $11.2233
≥500 USD $10.86135
≥1000 USD $10.4994
Inventory: 1156
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status OBSOLETE (Last Updated: 2 weeks ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 25V
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 2A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 532pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 17 ns
Fall Time (Typ) 18 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 3.6A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.1Ohm
Drain to Source Breakdown Voltage 25V
Avalanche Energy Rating (Eas) 245 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
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