Resistor - Emitter Base (R2) 100 k Ω
Continuous Collector Current 100mA
Resistor - Base (R1) 100 k Ω
Frequency - Transition 250MHz
Max Breakdown Voltage 50V
Transition Frequency 250MHz
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 5mA 5V
Max Collector Current 20mA
Collector Emitter Voltage (VCEO) 300mV
Transistor Type NPN - Pre-Biased
Transistor Application SWITCHING
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 150mW
Subcategory BIP General Purpose Small Signal
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Tin/Copper (Sn/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)