Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Element Configuration Dual
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 6.4m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 827pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A 26A
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 55A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate