DN2625DK6-G
RoHS 
RoHS compliant
RoHS compliantPackage 8-VDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N-CHANNEL DEPLETION MODE
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Buying Options
Total Price: USD $2.95
Unit Price: USD $2.948
≥1 USD $2.948
≥10 USD $2.4552
≥100 USD $2.2176
Inventory: 701
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Weight 37.393021mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tray
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8
ECCN Code EAR99
Resistance 3.5Ohm
Terminal Finish MATTE TIN
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PDSO-N8
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 2
Voltage 250V
Element Configuration Dual
Current 11A
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 1A, 0V
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 7.04nC @ 1.5V
Rise Time 20ns
Fall Time (Typ) 20 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 1.1A
Gate to Source Voltage (Vgs) 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Depletion Mode
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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