GP1M016A060N
RoHS
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Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 16A TO3PN
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Technical Details
Technical
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Input Capacitance (Ciss) (Max) @ Vds 3039pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 470mOhm @ 8A, 10V
FET Type N-Channel
Power Dissipation-Max 312W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package TO-3PN
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Alternative Model
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