IRF9956
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 30V 3.5A 8-SOIC
PDF
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Buying Options
Total Price: USD $0.5
Unit Price: USD $0.4978
≥1 USD $0.4978
≥10 USD $0.4085
≥100 USD $0.39615
≥500 USD $0.38285
≥1000 USD $0.3705
Inventory: 1239
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 44 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 16A
Drain-source On Resistance-Max 0.1Ohm
Drain Current-Max (Abs) (ID) 3.5A
JEDEC-95 Code MS-012AA
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.5A
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 100m Ω @ 2.2A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Power - Max 2W
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of Elements 2
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G8
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Terminal Form GULL WING
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Terminal Finish TIN LEAD
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Series HEXFET?
Published 2003
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Alternative Model
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