EPC2101ENGRT
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
GAN TRANS ASYMMETRICAL HALF BRID
PDF
/
Inventory: 7095
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Supply Chain
Factory Lead Time 22 Weeks
Physical
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series eGaN?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 11.5mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 30V
Current - Continuous Drain (Id) @ 25°C 9.5A 38A
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 5V
Drain to Source Voltage (Vdss) 60V
FET Feature GaNFET (Gallium Nitride)
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
EPC2101ENGRT+price,EPC2101ENGRT+datasheet,EPC2101ENGRT+in stock,buy+EPC2101ENGRT,finder+EPC2101ENGRT,EPC2101ENGRT+tutorials,EPC2101ENGRT+download