IRF9952TR
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 30V 8-SOIC
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Buying Options
Total Price: USD $0.67
Unit Price: USD $0.67165
≥1 USD $0.67165
≥10 USD $0.551
≥100 USD $0.5339
≥500 USD $0.5168
≥1000 USD $0.4997
Inventory: 20818
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V
Current - Continuous Drain (Id) @ 25°C 3.5A 2.3A
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 3.5A
Drain-source On Resistance-Max 0.1Ohm
Pulsed Drain Current-Max (IDM) 16A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 44 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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