IRF6726MTR1PBF
RoHS
/
Package DirectFET? Isometric MT
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 32A DIRECTFET
PDF
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Buying Options
Total Price: USD $2.55
Unit Price: USD $2.55075
≥1 USD $2.55075
≥10 USD $2.09285
≥100 USD $2.0273
≥500 USD $1.9627
≥1000 USD $1.89715
Inventory: 1132
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MT
Number of Pins 7
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Power Dissipation-Max 2.8W Ta 89W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.7m Ω @ 32A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6140pF @ 15V
Current - Continuous Drain (Id) @ 25°C 32A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs 77nC @ 4.5V
Rise Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 32A
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 250A
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 260 mJ
Recovery Time 41 ns
Nominal Vgs 1.7 V
Dimensions
Height 508μm
Length 5.45mm
Width 5.05mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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