IRF7530TR
RoHS
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Package 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 20V 5.4A MICRO8
PDF
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Buying Options
Total Price: USD $0.42
Unit Price: USD $0.41515
≥1 USD $0.41515
≥10 USD $0.34105
≥100 USD $0.32965
≥500 USD $0.3192
≥1000 USD $0.30875
Inventory: 13706
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IRF7530
JESD-30 Code S-PDSO-G8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 1.3W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 5.4A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1310pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.4A
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drain Current-Max (Abs) (ID) 5.4A
Drain-source On Resistance-Max 0.03Ohm
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 20V
Avalanche Energy Rating (Eas) 33 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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