Avalanche Energy Rating (Eas) 2500 mJ
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 44A
Turn-Off Delay Time 54 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 312nC @ 10V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Input Capacitance (Ciss) (Max) @ Vds 7410pF @ 25V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Rds On (Max) @ Id, Vgs 100m Ω @ 22A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 450W Tc
Terminal Form UNSPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ