IRF7103Q
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 50V 3A 8-SOIC
PDF
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Buying Options
Total Price: USD $6.91
Unit Price: USD $6.91315
≥1 USD $6.91315
≥10 USD $5.67245
≥100 USD $5.4948
≥500 USD $5.31715
≥1000 USD $5.14045
Inventory: 1148
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 2.4W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 255pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 50V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.13Ohm
Pulsed Drain Current-Max (IDM) 25A
DS Breakdown Voltage-Min 50V
Avalanche Energy Rating (Eas) 22 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 2.4W
FET Feature Standard
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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