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Package 3-ESIP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description TRANS PNP DARL 150V 17A MT200
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case 3-ESIP
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Published 1999
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature BUILT-IN BIAS RESISTOR
Max Power Dissipation 200W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 200W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 17A
DC Current Gain (hFE) (Min) @ Ic, Vce 5000 @ 10A 4V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 2.5V @ 1.2A, 6A
Collector Emitter Breakdown Voltage 150V
Transition Frequency 45MHz
Frequency - Transition 45MHz

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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