STB85NS04Z
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 33V 80A D2PAK
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 550 mJ
Drain to Source Breakdown Voltage 33V
Drain-source On Resistance-Max 0.015Ohm
Drain Current-Max (Abs) (ID) 60A
Gate to Source Voltage (Vgs) 18V
Continuous Drain Current (ID) 80A
Fall Time (Typ) 145 ns
Vgs (Max) ±18V
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 15m Ω @ 30A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 215W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 215W Tc
Number of Elements 1
Pin Count 3
Base Part Number STB85N
Terminal Form THROUGH-HOLE
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series SAFeFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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