DTD543EETL
RoHS 
RoHS compliant
RoHS compliantPackage SC-75, SOT-416
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
TRANS PREBIAS NPN 150MW EMT3
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Buying Options
Total Price: USD $0.28
Unit Price: USD $0.2816
≥1 USD $0.2816
≥10 USD $0.198
≥100 USD $0.099616
≥500 USD $0.088317
≥1000 USD $0.068728
Inventory: 1168
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Number of Pins 3
Technical
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO 1
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number DTD543
Pin Count 3
Output Voltage 60mV
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application AMPLIFIER
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 115 @ 100mA 2V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage 12V
Max Frequency 260MHz
Transition Frequency 260MHz
Max Breakdown Voltage 12V
Resistor - Base (R1) 4.7 k Ω
Continuous Collector Current 500mA
Resistor - Emitter Base (R2) 4.7 k Ω
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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