DTD123TSTP
RoHS 
RoHS compliant
RoHS compliantPackage SC-72 Formed Leads
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
TRANS PREBIAS NPN 300MW SPT
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
VCEsat-Max 0.3 V
Resistor - Base (R1) 2.2 k Ω
Frequency - Transition 200MHz
Transition Frequency 200MHz
Collector Emitter Breakdown Voltage 40V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 5V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 300mV
Transistor Type NPN - Pre-Biased
Polarity/Channel Type NPN
Transistor Application SWITCHING
Power - Max 300mW
Configuration SINGLE WITH BUILT-IN RESISTOR
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Base Part Number DTD123
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Terminal Position SINGLE
Max Power Dissipation 300mW
Subcategory BIP General Purpose Small Signal
HTS Code 8541.21.00.75
Additional Feature DIGITAL
Terminal Finish TIN SILVER COPPER
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e1
Published 1998
Packaging Tape & Reel (TR)
Physical
Transistor Element Material SILICON
Package / Case SC-72 Formed Leads
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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