Drain Current-Max (Abs) (ID) 40A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 18A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Ta 40A Tc
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 15V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Rds On (Max) @ Id, Vgs 5.2m Ω @ 20A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.1W Ta 36W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ