TP65H300G4LSG
RoHS
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Package 3-PowerDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
GAN FET N-CH 650V PQFN
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Technical Details
Technical
Vgs (Max) ±18V
Drive Voltage (Max Rds On,Min Rds On) 8V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 9.6nC @ 8V
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 400V
Vgs(th) (Max) @ Id 2.6V @ 500μA
Rds On (Max) @ Id, Vgs 312m Ω @ 5A, 8V
FET Type N-Channel
Power Dissipation-Max 21W Tc
Technology GaNFET (Gallium Nitride)
Part Status Active
Operating Temperature -55°C~150°C TJ
Physical
Package / Case 3-PowerDFN
Mounting Type Surface Mount
Alternative Model
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